IRF2805SPBF Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 55V 135A D2PAK
Specifications
Series HEXFET®
Part Status Not For New Designs
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 135A (Tc)
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) @ Vds 5110pF @ 25V
Power - Max 200W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 55V 135A D2-PAK
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 135A
Drain Source Voltage Vds 55V
On Resistance Rds(on) 4.7mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 200W
Transistor Case Style TO-263
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (17-Dec-2015)
Alternate Case Style D2-PAK
Current Id Max 135A
Junction to Case Thermal Resistance A 0.75°C/W
On State resistance @ Vgs = 10V 4.7mohm
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 700A
Voltage Vds 55V
Voltage Vds Typ 55V
Voltage Vgs Max 20V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 4V
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sku #: 8657513
Infineon Infineon - Mosfet, N, 55V, 135A, D2-Pak - Irf2805Spbf |Infineon IRF2805SPBF out of stock
£2.68
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