IRF7341PBF Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
MOSFET 2N-CH 55V 4.7A 8-SOIC
Specifications
Series HEXFET®
Part Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 740pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's - Dual
MOSFET DUAL NN LOGIC SO-8
Specifications
Transistor Polarity Dual N Channel
Continuous Drain Current Id 4.7A
Drain Source Voltage Vds 55V
On Resistance Rds(on) 50mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 1V
Power Dissipation Pd 2W
Transistor Case Style SOIC
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range -
Automotive Qualification Standard -
MSL MSL 1 - Unlimited
SVHC No SVHC (17-Dec-2015)
Continuous Drain Current Id N Channel 4.7A
Current Id Max 4.7A
Current Temperature 25°C
Drain Source Voltage Vds N Channel 55V
External Depth 5.2mm
External Length / Height 1.75mm
External Width 4.05mm
Full Power Rating Temperature 25°C
Junction Temperature Tj Max 150°C
Junction Temperature Tj Min -55°C
Module Configuration Dual
No. of Transistors 2
On Resistance Rds(on) N Channel 0.056ohm
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +150°C
Pulse Current Idm 38A
Row Pitch 6.3mm
SMD Marking F7341
Voltage Vds 55V
Voltage Vds Typ 55V
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