IRFZ44VPBF Price & Stock

Manufacturer
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
MOSFET N-CH 60V 55A TO-220AB
Specifications
Series HEXFET®
Part Status Active
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) @ Vds 1812pF @ 25V
Power - Max 115W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Electronic & Electrical Components > Semiconductors - Discretes > Transistors > Transistors - MOSFET's (< 600V)
MOSFET N 60V 55A TO-220
Specifications
Transistor Polarity N Channel
Continuous Drain Current Id 55A
Drain Source Voltage Vds 60V
On Resistance Rds(on) 16.5mohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 4V
Power Dissipation Pd 115W
Transistor Case Style TO-220AB
No. of Pins 3Pins
Operating Temperature Max 175°C
Product Range -
Automotive Qualification Standard -
MSL -
SVHC No SVHC (17-Dec-2015)
Current Id Max 55A
Junction to Case Thermal Resistance A 1.3°C/W
Operating Temperature Min -55°C
Operating Temperature Range -55°C to +175°C
Pulse Current Idm 220A
Termination Type Through Hole
Voltage Vds Typ 60V
Voltage Vgs Max 4V
Voltage Vgs Rds on Measurement 10V
Voltage Vgs th Max 4V
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