MJD31C1G Price & Stock
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Manufacturer
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
TRANS NPN 100V 3A IPAK
Specifications
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Power - Max | 1.56W |
| Frequency - Transition | 3MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-Pak |
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| Part # | Manufacturer | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
| MJD31C1G | ON Semiconductor | Trans GP BJT NPN 100V 3A 1560mW 3-Pin(3+Tab) IPAK Tube | 2000 |
|
Inquiry | |
| MJD31C1G. | ONSEMI | BIPOLAR TRANSISTOR NPN 100V IPAK-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz | 880 |
|
Inquiry |
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